(China (Mainland))
Product Summary
The 2MBI150U4H-170 is an IGBT MODULE.
Parametrics
2MBI150U4H-170 absolute maximum ratings: (1)Collector-Emitter voltage: 1700 V; (2)Gate-Emitter voltage: ±20 V; (3)Collector current: 200 A at Tc=25 ℃, 150 A at Tc=80 ℃; (4)Collector Power Dissipation: 780 W; (5)Junction temperature: 150 ℃; (6)Storage temperature: -40 to +125 ℃; (7)Isolation voltage between terminal and copper base: 3400 VAC; (8)Screw Torque: Mounting: 3.5 Nm, Terminals: 4.5 Nm.
Features
2MBI150U4H-170 electrical characteristics: (1)Zero gate voltage Collector current: 2.0 mA max at VGE=0 V, VCE=1700 V; (2)Gate-Emitter leakage current: 400 nA max at VCE=0 V, VGE=±20 V; (3)Gate-Emitter threshold voltage: 4.5 to 8.5 V at VCE=20 V, Ic=150mA; (4)Input capacitance: 14 nF at VCE=10 V, VGE=0 V, f=1 MHz.
Diagrams
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2MBI100NE-120 |
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2MBI100P-140 |
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2MBI100PC-140 |
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Negotiable |
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